1 - 2 ? 2003 ixys all rights reserved 321 ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ixys corporation 3540 bassett street, santa clara ca 95054 phone: (408) 982-0700, fax: 408-496-0670 ixbp 5n160 g ixbh 5n160 g i c25 = 5.7 a v ces = 1600 v v ce(sat) = 4.9 v t f = 70 ns high voltage bimosfet tm monolithic bipolar mos transistor to-247 ad (ixbh) a = anode, c = cathode , tab = cathode g e c c (tab) g c e to-220 ab (ixbp) c (tab) ixys reserves the right to change limits, test conditions and dimensions. igbt symbol conditions maximum ratings v ces t vj = 25c to 150c 1600 v v ges 20 v i c25 t c = 25c 5.7 a i c90 t c = 90c 3.5 a i cm v ge = 10/0 v; r g = 47 ? ; t vj = 125c 6 a v cek rbsoa, clamped inductive load; l = 100 h 0.8v ces p tot t c = 25c 68 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 3 a; v ge = 15 v; t vj = 25c 4.9 7.2 v t vj = 125c 5.6 v v ge(th) i c = 0.3 ma; v ge = v ce 3.5 5.5 v i ces v ge = 0 v; v ce = v ces ; t vj = 25c 150 a v ce = 0.8v ces ; t vj = 125c 50 a i ges v ce = 0 v; v ge = 20 v 100 na t d(on) 140 ns t r 200 ns t d(off) 120 ns t f 70 ns c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 325 pf q gon v ce = 600v; v ge = 10 v; i c = 3 a 26 nc v f (reverse conduction); i f = 3 a 6 v r thjc 1.85 k/w inductive load, t vj = 125c v ce = 960 v; i c = 3 a v ge = 10/0 v; r g = 47 ? features high voltage bimosfet tm - substitute for high voltage mosfets with significantly lower voltage drop - mosfet compatible control 10 v turn on gate voltage - fast switching for high frequency operation - reverse conduction capability industry standard package - to-220ab - to-247ad epoxy meets ul94v-0 applications switched mode power supplies dc-dc converters resonant converters lamp ballasts laser generators, x ray generators g c e preliminary data sheet
2 - 2 ? 2003 ixys all rights reserved 321 ixbp 5n160 g ixbh 5n160 g dimensions component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+125 c m d mounting torque (to-220) 0.6 nm (to-247) 1.2 nm symbol conditions characteristic values min. typ. max. r thch with heatsink compound 0.25 k/w weight (to-220) 2 g (to-247) 6 g dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d* 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-247 ad dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 to-220 ab
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